Band Gap Energy in Silicon

Silicon nanowire band gap modification.

Band gap modification for small-diameter (approximately 1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination. This effect has been observed...

Dipole-allowed direct band gap silicon superlattices

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic d...

Empirical determination of the energy band gap narrowing in p+ silicon heavily doped with boron

Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Photonic band-gap guidance in high-porosity luminescent porous silicon